10 kV T型電纜接頭半導(dǎo)電尖端 缺陷的電場(chǎng)分布仿真研究
Simulation study on electric field distribution of semiconductor tip defects in 10 kV T-shaped cable joints
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摘要: 建立環(huán)網(wǎng)柜中常用的JB-10/630型10 kV T型電纜接頭電場(chǎng)模型，研究硅橡膠絕緣層與交聯(lián)聚乙烯絕緣層交界面處存在金屬和半導(dǎo)電尖端缺陷時(shí)的電場(chǎng)分布特性。Abstract: Establish an electric field model for the JB-10/630 10 kV T-type cable joint commonly used in ring main units, and study the electric field distribution characteristics at the interface between silicone rubber insulation layer and cross-linked polyethylene insulation layer with metal and semiconductor tip defects.
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